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2SK2552-T1 JFET N-Channel 20v 0.15~0.3mA SOT-523 marking J5 High forward transfer admittance
最大源漏极电压Vds Drain-Source Voltage | 20v |
栅源极击穿电压V(BR)GS Gate-Source Voltage | -20v |
漏极电流(Vgs=0V)IDSS Drain Current | 0.15~0.24ma |
关断电压Vgs(off) Gate-Source Cut-off Voltage | -0.37~-1v |
耗散功率Pd Power Dissipation | 100mW/0.1W |
Description & Applications | •JUNCTION FIELD EFFECT TRANSISTOR •N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR • Low noise: −108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Especially suitable for audio and telephone |
描述与应用 | •结型场效应晶体管 •N沟道硅结型场效应晶体管 •低噪音: -108.5 dB(典型值)。 (VDD= 2.0 V,C= 5 pF的,RL=2.2kΩ上) •特别适用于音频和电话 |