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FDN352AP MOSFET P-Channel -30V -1.3A 0.15ohm SOT-23 marking 52ap
| 最大源漏极电压Vds Drain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 25V |
| 最大漏极电流Id Drain Current | -1.3A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.15Ω @-1.3A,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.8--2.5V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | High performance trench technology for extremely low RDS(ON) .High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. |
| 描述与应用 | 高性能沟道技术极低 RDS（ON） 行业标准SOT-23封装的高功率版本。 相同的引脚SOT-23的30％更高的功率处理能力 |
