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RHP020N06 MOSFET N-Channel 60v 2A SOT-89 marking LR high output power

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Product description
最大源漏极电压Vds Drain-Source Voltage60v
最大栅源极电压Vgs(±) Gate-Source Voltage20v
最大漏极电流Id Drain Current2A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.2Ω/Ohm @20A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1.0-2.5V
耗散功率Pd Power Dissipation500mW/0.5W
Description & Applications4V Drive Nch MOS FET Silicon N-channel MOS FET Low On-resistance. High speed switching. Wide SOA.
描述与应用4V驱动N沟道MOS FET 硅N沟道MOS FET 低导通电阻。 高速开关。 宽SOA
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