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MCH6606 Complex FET 50V 250mA/0.25A SOT-363/SC70-6/MCPH6 marking FF ultra high-speed switch 4V drive

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Product description
最大源漏极电压Vds
Drain-Source Voltage
50V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
250mA/0.25A
源漏极导通电阻Rds
Drain-Source On-State Resistance
10.5Ω@ VGS =4V, ID =30mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
1~2.4V
耗散功率Pd
Power Dissipation
800mW/0.8W
Description & ApplicationsUltrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • Composite type with 2 MOSFETs contained in a single package
描述与应用超高速开关应用 特点 •低导通电阻。 •超高速开关。 •4 V驱动。 •一个单一的包装中包含的2MOSFET的复合型
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