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BSV236SP MOSFET P-Channel -60V -300mA 6ohm SOT-363 marking X2 avalanche rating
| 最大源漏极电压Vds Drain-Source Voltage | -60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -0.3A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 6Ω @-200mA,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1.5--3.5V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | OptiMOS -P Small-Signal-Transistor P-Channel Enhancement mode Super Logic Level (2.5 V rated) 150°C operating temperature Avalanche rated dv/dt rated |
| 描述与应用 | OptiMOS-P小信号晶体管 P沟道 增强模式 超级逻辑电平（2.5 V额定） 150°C的工作温度 额定雪崩 dv / dt的额定 |
