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RN1108CT NPN Bipolar Digital Transistor (BRT) 20V 50mA 22k 47k gain120 SOT-883/CST3/0402 marking L7 switch inverting circuit interface circuit and driver circuit
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V |
集电极连续输出电流IC Collector Current(IC) | 50mA |
基极输入电阻R1 Input Resistance(R1) | 22KΩ/Ohm |
基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
电阻比(R1/R2) Resistance Ratio | 0.468 |
直流电流增益hFE DC Current Gain(hFE) | 120 |
截止频率fT Transtion Frequency(fT) | |
耗散功率Pc Power Dissipation | 0.05W/50mW |
Description & Applications | Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications •Incorporating a bias resistor into a transistor reduces the number of parts, which enable the manufacture of ever more compact equipment and saves assembly cost. •Complementary to RN2107CT to RN2109CT |
描述与应用 | 开关应用 逆变电路应用 接口电路的应用 驱动器电路应用 •结合成一个晶体管的偏置电阻器的数量减少 部分,这使制造的更加紧凑的 设备和节省组装成本。 •互补RN2107CT的到RN2109CT |