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RT1N234M NPN Bipolar Digital Transistor (BRT) 50V 200mA/0.2A 2.2k 10k SOT-323/SC-70 marking NE
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
集电极连续输出电流IC Collector Current(IC) | 200mA/0.2A |
基极输入电阻R1 Input Resistance(R1) | 2.2KΩ/Ohm |
基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
电阻比(R1/R2) Resistance Ratio | 0.22 |
直流电流增益hFE DC Current Gain(hFE) | 33 |
截止频率fT Transtion Frequency(fT) | 200MHz |
耗散功率Pc Power Dissipation | 0.2W/200mW |
Description & Applications | FEATURE ・Built-in bias resistor (R1=2.2kΩ,R2=10kΩ) |
描述与应用 | ·内置偏置电阻(R1=2.2KΩ, R2=10KΩ |