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BC847BW NPN Transistors(BJT) 50V 100mA/0.1A 100MHz 200~450 200~600 mV SOT-23/SC-59 marking 1F generalswitch and amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
45V |
集电极连续输出电流IC Collector Current(IC) |
100mA/0.1A |
截止频率fT Transtion Frequency(fT) |
100MHz |
直流电流增益hFE DC Current Gain(hFE) |
200~450 |
管压降VCE(sat) Collector-Emitter Saturation Voltage |
200~600 mV |
耗散功率Pc Power Dissipation |
200mW/0.2W |
Description & Applications | NPN general purpose transistor FEATURES • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. |
描述与应用 | NPN通用晶体管 特点 •低电流(最大100 mA) •低电压(最大65 V)。 应用 •通用开关和放大。 |