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MCH5835 complex FET MOSFET+schottky diode 30V 1.5A 500mA/0.5A 0.37V SOT-353/SC70-5/MCPH5 marking XZ low on-resistance/ultra high-speed switch/short reverse recovery time/low forward voltage

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Product description
最大源漏极电压Vds
Drain-Source Voltage
N沟道 N-Channel
最大栅源极电压Vgs(±)
Gate-Source Voltage
30V
最大漏极电流Id
Drain Current
12V
源漏极导通电阻Rds
Drain-Source On-State Resistance
1.5A
开启电压Vgs(th)
Gate-Source Threshold Voltage
215mΩ@ VGS = 4V, ID =800mA
耗散功率Pd
Power Dissipation
0.4~1.3V
Description & Applications肖特基二极管SBD Schottky Barrier Diodes
描述与应用30V
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