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BSS284 MOSFET P-Channel -50V -130mA 5ohm SOT-23 marking SSD
| 最大源漏极电压Vds Drain-Source Voltage | -50V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -0.13A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 5Ω @-130mA,-10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.8--1.8V |
| 耗散功率Pd Power Dissipation | 360mW/0.36W |
| Description & Applications | SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th)= -0.8...-1.6 V |
| 描述与应用 | SIPMOS®小信号晶体管 •P沟道 •增强模式 •逻辑电平 •VGS（TH）=-0.8...-1.6 V |
