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UPA831TF NPN+NPN Complex Bipolar Transistor 20V 100mA/65mA 100~145/70~150 SOT-363/SC-88 marking V24 switch and digital circuit application
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V(BR) CBO Collector-Base Voltage |
Q1/Q2=20V/20V |
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V(BR) CEO Collector-Emitter Voltage |
Q1/Q2=12V/10V |
| Collector Current(IC) | Q1/Q2=100MA/65MA |
| Transtion Frequency(fT) | Q1/Q2=4.5GHZ/7GHZ |
| DC Current Gain(hFE) | Q1/Q2=100~150/70~150 |
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VCE (sat) Collector-Emitter Saturation Voltage |
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| Power Dissipation （Pd） | 200MW |
| Description & Applications | NPN SILICON EPITAXIAL TWIN TRANSISTOR
• LOW NOISE:
Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA
Q2:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA
• HIGH GAIN:
Q1: |S21E|
2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V,
lc = 7 mA
Q2: |S21E|
2 = 12.0 dB TYP at f = 1 GHz, VCE = 3 V,
lc = 7 mA
• 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
• 2 DIFFERENT BUILT-IN TRANSISTORS
(Q1: NE856, Q2: NE681)
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| Technical Documentation Download | Read Online |
