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SCH2808-S-TL-E complex FET MOSFET+schottky diode 30V 1.4A 500mA/0.5A 0.42V SOT-563/SCH6 marking QH low on-resistance/ultra high-speed switch/short reverse recovery time/low forward voltage

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Product description
最大源漏极电压Vds
Drain-Source Voltage		N沟道 N-Channel
最大栅源极电压Vgs(±)
Gate-Source Voltage		30V
最大漏极电流Id
Drain Current		20V
源漏极导通电阻Rds
Drain-Source On-State Resistance		1.4A
开启电压Vgs（th）
Gate-Source Threshold Voltage		300mΩ@ VGS =10V, ID =700mA
耗散功率Pd
Power Dissipation		1.2~2.6V
Description & Applications肖特基二极管SBD Schottky Barrier Diodes
描述与应用30V
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