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2SB1203T PNP transistors（BJT） -60V -5A 130MHz 200~400 -550mV/-0.55V TO-252/DPAK marking B1203T highspeed inverter/convertor
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流IC Collector Current(IC) | -5A |
| 截止频率fT Transtion Frequency(fT) | 130MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −550mV/-0.55V |
| 耗散功率Pc PoWer Dissipation | 1W |
| Description & Applications | PNP Silicon epitaxial planar transistor High current switching applications Applications Relay drivers ,high speed inverters,converters,and other general high current switching applications Feature Low collector-to-emitter saturation voltage High current and high fT Excellent linearity of hFE Fast switching speed |
| 描述与应用 | PNP硅外延平面晶体管 高电流开关应用 应用 继电器驱动器，高速逆变器，转换器，及其他一般高电流开关应用 特点 低集电极 - 发射极饱和电压 高电流和高FT 出色的线性度HFE 开关速度快 |
