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2SB1203T PNP transistors(BJT) -60V -5A 130MHz 200~400 -550mV/-0.55V TO-252/DPAK marking B1203T highspeed inverter/convertor

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−50V
集电极连续输出电流IC
Collector Current(IC)
-5A
截止频率fT
Transtion Frequency(fT)
130MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−550mV/-0.55V
耗散功率Pc
PoWer Dissipation
1W
Description & ApplicationsPNP Silicon epitaxial planar transistor High current switching applications Applications Relay drivers ,high speed inverters,converters,and other general high current switching applications Feature Low collector-to-emitter saturation voltage High current and high fT Excellent linearity of hFE Fast switching speed
描述与应用PNP硅外延平面晶体管 高电流开关应用 应用 继电器驱动器,高速逆变器,转换器,及其他一般高电流开关应用 特点 低集电极 - 发射极饱和电压 高电流和高FT 出色的线性度HFE 开关速度快
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