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RJK002N06 MOSFET N-Channel 60v 2A SOT-89 marking ML low gate chargefast switch/ESD protection gate
| 最大源漏极电压Vds Drain-Source Voltage | 60v |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20v |
| 最大漏极电流Id Drain Current | 2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.2Ω/Ohm @20A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-2.5V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | 4V Drive Nch MOS FET Silicon N-channel MOS FET Low On-resistance. High speed switching. Wide SOA. |
| 描述与应用 | 4V驱动N沟道MOS FET 硅N沟道MOS FET 低导通电阻。 高速开关。 宽SOA |
