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SST4391 JFET N-Channel 35v 50mA SOT-23 marking CA high off-isolation
| 最大源漏极电压Vds Drain-Source Voltage | 35v |
| 栅源极击穿电压V(BR)GS Gate-Source Voltage | -35v |
| 漏极电流(Vgs=0V)IDSS Drain Current | 50ma |
| 关断电压Vgs(off) Gate-Source Cut-off Voltage | -4~-10v |
| 耗散功率Pd Power Dissipation | 350mW/0.35W |
| Description & Applications | •N–Channel JFETs •Low On-Resistance:4391<30 •Fast Switching—tON: 4 ns •High Off-Isolation: ID(off)with Low Leakage •Low Capacitance: < 3.5 pF •Low Insertion Loss |
| 描述与应用 | •N沟道JFETs •低导通电阻：4391<30 •快速开关吨：4纳秒 •高关断隔离：ID（关闭）与低漏 •低电容：<3.5 pF的？ •低插入损耗 |
