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PMBFJ111 JFET N-Channel 40v 20mA SOT-23 marking 41W high-speed switch
| 最大源漏极电压Vds Drain-Source Voltage | 40v |
| 栅源极击穿电压V(BR)GS Gate-Source Voltage | -40v |
| 漏极电流(Vgs=0V)IDSS Drain Current | 20ma |
| 关断电压Vgs(off) Gate-Source Cut-off Voltage | -10~-3v |
| 耗散功率Pd Power Dissipation | 300mW/0.3W |
| Description & Applications | •N-channel junction FETs •High-speed switching •Interchangeability of drain and source connections •Low RDSon at zero gate voltage (< 30 for PMBFJ111). •Analog switches •Commutators •Multiplexers • Thin and thick film hybrids. |
| 描述与应用 | •N沟道结场效应晶体管 •高速开关 •漏极和源极连接的互换性 •在零电压（<30为PMBFJ111），低导通电阻。 •模拟开关 •交换机 •多路复用器 •薄和厚薄膜混合动力汽车。 |
