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MTM2311OOL MOSFET P-Channel -12V -4A 0.03ohm SOT-323 marking DM low voltage drive low on-resistance

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-12V
最大栅源极电压Vgs(±)
Gate-Source Voltage
8V
最大漏极电流Id
Drain Current
-4A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.03Ω @-1A,-4V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.3--1.0V
耗散功率Pd
Power Dissipation
500mW/0.5W
Description & ApplicationsFeatures Low voltage drive (1.8 V, 2.5 V, 4 V) Realization of low on-resistance, using extremely fine process Contributes to miniaturization of sets, reduction of component count. Eco-friendly Halogen-free package
描述与应用低电压驱动(1.8 V,2.5 V,4 V) 实现低导通电阻,用极其精细的过程 集小型化,减少元件数量。 环保无卤素封装
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