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MMBT5087LT1G PNP transistors（BJT） -50V -50mA 40MHz 250~800 -300mV/-0.3V SOT-23/SC-59 marking 2Q low noise
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流IC Collector Current(IC) | -50mA |
| 截止频率fT Transtion Frequency(fT) | 40MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 250~800 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率Pc PoWer Dissipation | 225mW/0.225W |
| Description & Applications | Low Noise Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant |
| 描述与应用 | 低噪声晶体管PNP硅 特点 •这些器件是无铅，无卤/无BFR，并符合RoHS标准 |
