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MRF947T1 NPN Transistors(BJT) 20V 50mA 8Ghz 50~200 SOT-323/SC-70 marking A high gain ,low noisesmall signal amplifier

Price (excluding freight):
Batches(PCS):
$0.101
≤99
$0.091
≤499
$0.076
≤999
$0.066
≤2999
$0.060
FCL

Hot selling goods

Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
10V
集电极连续输出电流IC
Collector Current(IC)
50mA
截止频率fT
Transtion Frequency(fT)
8Ghz
直流电流增益hFE
DC Current Gain(hFE)
50~200
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
Description & Applications• The RF Line NPN Silicon Low Noise High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. • Fully Implanted Base and Emitter Structure • 9 Finger, 1.25 Micron Geometry with Gold Top Metal • Gold Sintered Back Metal • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel T3 suffix = 10,000 units per reel
描述与应用•RF线NPN硅高频低噪声晶体管 设计用于在高增益,低噪声小信号放大器。该系列产品 具有良好的宽带线性,并提供多种封装。 •完全植入基极和发射极结构 •9个手指,1.25微米几何与黄金顶部的金属 •黄金背面金属烧结 •可在磁带和卷轴包装选择: T1后缀=3000单位每卷 T3后缀=10,000单位每卷
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