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MMUN2212LT1G NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 22k 22k gain60-100 SOT-23/SC-59 marking A8B
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 22KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 22KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 1 |
| 直流电流增益hFE DC Current Gain(hFE) | 60-100 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 0.25W /250mW |
| Description & Applications | Features • Simplifies Circuit Design • Reduces Board Space and Component Count • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant |
| 描述与应用 | 特性 •简化电路设计 •缩小板级空间和元件数量 •这些器件是无铅，无卤/不含BFR，并符合RoHS标准 |
