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BFR93AW NPN Transistors(BJT) 20V 50mA 6Ghz 50~200 SOT-323/SC-70 marking R2 RF amplifier, mixer and oscillator
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 12V |
集电极连续输出电流IC Collector Current(IC) | 50mA |
截止频率fT Transtion Frequency(fT) | 6Ghz |
直流电流增益hFE DC Current Gain(hFE) | 50~200 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | |
耗散功率Pc Power Dissipation | 300mW/0.3W |
Description & Applications | NPN 5 GHz wideband transistor FEATURES High power gain Gold metallization ensures excellent reliability SOT323 (S-mini) package. APPLICATIONS It is designed for use in RF amplifiers,mixers and oscillators with signal frequencies up to 1 GHz |
描述与应用 | 5 GHz的宽带晶体管NPN 特点 高功率增益 黄金金属确保卓越的可靠性 SOT323封装(S-迷你)。 应用 它是专为使用的RF放大器,混频器和振荡器的信号频率高达1 GHz |