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DTC123JET1 NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 2.2k 47k gain80 SOT-523 marking 8M
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 2.2KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.47 |
| 直流电流增益hFE DC Current Gain(hFE) | 80 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 0.2W/200mW |
| Description & Applications | Features • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • The SC–75/SOT–416 package can be soldered using wave or reflow. The modified gull–winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. • Available in 8 mm, 7 inch/3000 Unit Tape & Reel |
| 描述与应用 | 特性 •简化电路设计 •缩小板级空间 •减少元件数量 •SC-75/SOT-416包装可以使用波或回流焊接。修改后的鸥翅引线在焊接热应力吸收消除模具损坏的可能性。 •可在8毫米，7 inch/3000单位带和卷轴 |
