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MMBT2369 NPN Transistors(BJT) 40V 200mA/0.2A 40~120 200mV~500mV SOT-23/SC-59 marking 1J switch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 40V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 15V |
| 集电极连续输出电流IC Collector Current(IC) | 200mA/0.2A |
| 截止频率fT Transtion Frequency(fT) | |
| 直流电流增益hFE DC Current Gain(hFE) | 40~120 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 200mV~500mV |
| 耗散功率Pc Power Dissipation | 225mW/0.225W |
| Description & Applications | NPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. |
| 描述与应用 | NPN开关晶体管 该设备是专为高速饱和开关集电极 10 mA至100 mA的电流 |
