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MMBF102 JFET N-Channel 25v 2~20mA SOT-23 marking 61Y analog switch

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Product description
最大源漏极电压Vds
Drain-Source Voltage
25v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-25v
漏极电流(Vgs=0V)IDSS
Drain Current
2~20ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-8v
耗散功率Pd
Power Dissipation
225mW/0.225W
Description & Applications•N-Channel RF Amplifier Features • This device is designed primarily for electronic switching applications such as low On Resistance analog switching. • Sourced from process 50 •This device is designed primarily for electronic switching applications such as low On Resistance analog switching
描述与应用•N沟道RF放大器 •本设备主要用于电子开关应用:如低导通电阻模拟开关设计。 •来源于过程50 •本设备主要用于电子开关应用:如低导通电阻模拟开关
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