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2SB1182T201R PNP transistors(BJT) -40V -2A 100MHz 180~390 -800mV/-0.8V TO-252/DPAK marking B1182

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-40V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−32V
集电极连续输出电流IC
Collector Current(IC)
-2A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
180~390
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−800mV/-0.8V
耗散功率Pc
PoWer Dissipation
500mW/0.5W
Description & ApplicationsPNP Silicon epitaxial planar transistor Medium power Transistor Features 1) Low VCE(sat). 2) Complements the 2SD1758
描述与应用PNP硅外延平面晶体管 中等功率晶体管 特点 1)低VCE(sat)的。 2)补充2SD1758
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