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BCX19 NPN Transistors(BJT) 50V 500mA/0.5A 100MHz 100~600 620mV/0.62V SOT-23/SC-59 marking U1 saturated switch and driver

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
45V
集电极连续输出电流IC
Collector Current(IC)
500mA/0.5A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
100~600
管压降VCE(sat)
Collector-Emitter Saturation Voltage
620mV/0.62V
耗散功率Pc
Power Dissipation
250mW/0.25W
Description & ApplicationsNPN Medium Power Transistor • This device is designed for general purpose amplifiers. • Sourced from process 38
描述与应用NPN中等功率晶体管 这个装置是专为通用放大器。 •来源于过程38
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