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BCX19 NPN Transistors(BJT) 50V 500mA/0.5A 100MHz 100~600 620mV/0.62V SOT-23/SC-59 marking U1 saturated switch and driver
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 45V |
集电极连续输出电流IC Collector Current(IC) | 500mA/0.5A |
截止频率fT Transtion Frequency(fT) | 100MHz |
直流电流增益hFE DC Current Gain(hFE) | 100~600 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 620mV/0.62V |
耗散功率Pc Power Dissipation | 250mW/0.25W |
Description & Applications | NPN Medium Power Transistor • This device is designed for general purpose amplifiers. • Sourced from process 38 |
描述与应用 | NPN中等功率晶体管 这个装置是专为通用放大器。 •来源于过程38 |