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2SD2383 NPN Transistors(BJT) 400V 20mA 90MHz 100~250 85mV SOT-23/SC-59 marking N1 high voltage switch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 400V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 300V |
| 集电极连续输出电流IC Collector Current(IC) | 20mA |
| 截止频率fT Transtion Frequency(fT) | 90MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~250 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 85mV |
| 耗散功率Pc Power Dissipation | 200mW/0.2W |
| Description & Applications | NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE SWITCHING FEATURES • High voltage • Small dimension |
| 描述与应用 | 高压开关晶体管NPN硅外延 特点 •高电压 •小尺寸 |
