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NZT605 NPN Transistors(BJT) 140V 1.5A 150MHz 500~2000 1V SOT-223 marking 605
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 140V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 110V |
| 集电极连续输出电流IC Collector Current(IC) | 1.5A |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 500~2000 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 1V |
| 耗散功率Pc Power Dissipation | 1W |
| Description & Applications | • NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. • Sourced from process 06. |
| 描述与应用 | •达林顿晶体管NPN This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. • Sourced from process 06. |
