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FSB560 NPN Transistors(BJT) 80V 2A 75MHz 100~300 350mV/0.35V SOT-23/SC-59 marking 560 lowsaturated
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 80V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 60V |
| 集电极连续输出电流IC Collector Current(IC) | 2A |
| 截止频率fT Transtion Frequency(fT) | 75MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 350mV/0.35V |
| 耗散功率Pc Power Dissipation | 500mW/0.5W |
| Description & Applications | NPN Low Saturation Transistor high current gain |
| 描述与应用 | NPN低饱和晶体管 高电流增益 |
