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2SD2318 NPN Transistors(BJT) 80V 3A 50MHz 560 ~1800 1V TO-252/CPT3 marking D2318V high current gain power
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 80V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 60V |
| 集电极连续输出电流IC Collector Current(IC) | 3A |
| 截止频率fT Transtion Frequency(fT) | 50MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 560 ~1800 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 1V |
| 耗散功率Pc Power Dissipation | 1W |
| Description & Applications | High-current gain Power Transistor(60V, 3A) Features 1) High DC current gain. 2) Low saturation voltage. (Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A) 3) Complements the 2SB1639. |
| 描述与应用 | 高电流增益功率晶体管（60V，3A） 特点 1）高DC电流增益。 2）低饱和电压。 （VCE（sat）的典型值= 0.5V IC / IB=2A/0.5A） 3）补充2SB1639。 |
