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S-T111B33MC LDO Voltage Regulator 3.3V 190mV/0.19V With Enable Pin SOT-153/SOT23-5 marking OGS Short-Circuit Protection Over-Temperature Protection

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Product description
电路数量
Number of Regulators
1
输入电压VIN
Voltage - Input
-0.3~7V
输出电压VOUT
Voltage - Output
3.3V
输出电流Io
Current - Output
100mA/0.1A
最大压降VDO
Voltage - Dropout
190mV/0.19V
带使能脚EN/CE(ON/OFF功能)
With Enable Pin
有 Yes
最大耗散功率Pd
Power dissipation
600mW/0.6W
Description & ApplicationsHIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULATOR •Output voltage: 1.5 V to 5.5 V, selectable in 0.1 V steps. • High-accuracy output voltage: ±1.0% • Low dropout voltage: 190 mV typ. (3.0 V output product, IOUT = 100 mA) • Low current consumption: During operation: 50 μA typ., 90 μA max. During shutdown: 0.1 μA typ., 1.0 μA max. • High peak current capability: 150 mA output is possible (at VIN ≥ VOUT(S) + 1.0 V) • Built-in ON/OFF circuit: Ensures long battery life. • Low ESR capacitor can be used: A ceramic capacitor of 0.1 μF or more can be used for the output capacitor. • High ripple rejection: 80 dB typ. (at 1.0 kHz) • Built-in overcurrent protector: Overcurrent of output transistor can be restricted
描述与应用高纹波抑制低压差CMOS电压稳压器 •输出电压:1.5 V至5.5 V,0.1 V步骤选择。 •高输出电压精度:±1.0% •低压差电压:190 mV典型。 (3.0 V输出产品,IOUT= 100 mA时) •低电流消耗:在操作过程中:50μA(典型值),最大90μA。 休眠时:0.1μA(典型值),1.0μA最大值。 •高峰值电流能力:输出150 mA(VIN≥VOUT(S)+1.0 V) •内置开/关控制电路,确保电池寿命长。 •可以使用低ESR电容:0.1μF以上的陶瓷电容器可用于输出电容。 •高纹波抑制:80 dB(典型值)。 (1.0千赫) •内置过载电流保护,可以限制输出晶体管的过载电流
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