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EMD3 PNP+NPN Complex Bipolar Digital Transistor 50V 50mA 0.15W SOT-563/EMT6 marking D3 switching inverting interface driver circuit
| Collector-Base Voltage(VCBO) Q1/Q2 | -50V/50V |
| Collector-Emitter Voltage(VCEO) Q1/Q2 | -50V/50V |
| Collector Current(IC) Q1/Q2 | -50mA/50mA |
| Q1 Input Resistance(R1) | 10KΩ/Ohm |
| Q1Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| Q1(R1/R2) Q1 Resistance Ratio | 1 |
| Q2 Input Resistance(R1) | 10KΩ/Ohm |
| Q2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| Q2(R1/R2) Q2 Resistance Ratio | 1 |
| DC Current Gain(hFE) | |
| Transtion Frequency(fT) | 250MHz |
| Power Dissipation | 150mW/0.15W |
| Description & Applications | Features •Dual Common Base−Collector Bias Resistor Transistors •Both the DTA114E chip and DTC114E chip in a EMT or UMT or SMT package. •Mounting possible with EMT3 or UMT3 or SMT3automatic mounting machines. •Transistor elements are independent, eliminating interference. •Mounting cost and area can be cut in half. |
| 描述与应用 | 特点 •双共基极 - 集电极偏置电阻晶体管 •无论是DTA114E芯片和DTC114E芯片在EMT或UMT或SMT封装。 •安装EMT3或UMT3或SMT3automatic的的安装机。 •晶体管元素是独立的，消除干扰。 •安装成本和面积可减少一半 |
