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BC847CLT1G NPN Transistors(BJT) 50V 100mA/0.1A 100MHz 420~800 200~600 mV SOT-23/SC-59 marking 1G
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 45V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 420~800 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 200~600 mV |
| 耗散功率Pc Power Dissipation | 225mW/0.225W |
| Description & Applications | Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V ESD Rating − Machine Model: >400 V • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant |
| 描述与应用 | 特点 •湿度敏感度等级：1 •ESD额定值 - 人体模型：>4000 V ESD额定值 - 机器型号：> 400 V •这些器件是无铅，无卤，无 BFR |
