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2SC4931 NPN Transistors(BJT) 16V 50mA 9Ghz 90~180 SOT-523/SMCP marking B2
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 16V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 8V |
集电极连续输出电流IC Collector Current(IC) | 50mA |
截止频率fT Transtion Frequency(fT) | 9Ghz |
直流电流增益hFE DC Current Gain(hFE) | 90~180 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | |
耗散功率Pc Power Dissipation | 100mW/0.1W |
Description & Applications | Features •NPN Epitaxial planar silicon transistor •low NOISE •High GAIN •high CUTOFF FREQUENCY •VERY Small-SIZED Package |
描述与应用 | 特点 •NPN外延平面硅晶体管 •低噪音 •高增益 •高截止频率 •非常小型封装 |