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SCH2810-S-TL-E complex FET MOSFET+schottky diode -12V -1.3A 500mA/0.5A 0.46V SOT-563/SCH6 marking QK low on-resistance/ultra high-speed switch/short reverse recovery time/low forward voltage

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Product description
最大源漏极电压Vds
Drain-Source Voltage		P沟道 P-Channel
最大栅源极电压Vgs(±)
Gate-Source Voltage		-12V
最大漏极电流Id
Drain Current		-12V
源漏极导通电阻Rds
Drain-Source On-State Resistance		-1.3A
开启电压Vgs（th）
Gate-Source Threshold Voltage		270mΩ@ VGS =-10V, ID =-700mA
耗散功率Pd
Power Dissipation		-1.0~-2.4V
Description & Applications肖特基二极管SBD Schottky Barrier Diodes
描述与应用15V
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