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SSM6K06FU MOSFET N-Channel 20V 1.1A SOT-363/SC70-6/TSSOP6/SC-88/US6 marking KDA fast switch/low on-resistance/Low Gate Threshold Voltage
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 1.1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.16Ω/Ohm @500mA,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.6-1.1V |
| 耗散功率Pd Power Dissipation | 300mW/0.3W |
| Description & Applications | High Speed Switching Applications Small package Low on resistance : Ron = 160 mΩ max (@VGS = 4 V) Ron = 210 mΩ max (@VGS = 2.5 V) Low gate threshold voltage |
| 描述与应用 | 高速开关应用 小型封装 低导通电阻RON =160mΩ最大（@ VGS=4 V） RON =210mΩ最大（@ VGS= 2.5 V） 低栅极阈值电压 |
