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2SK4041-E1-A JFET N-Channel 20v 0.15~0.24mA 402 marking DF high gain ultra low noise
最大源漏极电压Vds Drain-Source Voltage | 20v |
栅源极击穿电压V(BR)GS Gate-Source Voltage | -20v |
漏极电流(Vgs=0V)IDSS Drain Current | 0.15~0.24ma |
关断电压Vgs(off) Gate-Source Cut-off Voltage | -0.37~-1v |
耗散功率Pd Power Dissipation | 100mW/0.1W |
Description & Applications | •N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR •High gain −1.0 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Super Low noise −115 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) |
描述与应用 | •N沟道硅结型场效应晶体管 •高增益 -1.0分贝(VDS=2.0 V,C =5 pF的,RL=2.2kΩ的) •超低噪音 -115分贝(VDS=2.0 V,C =5 pF的,RL=2.2kΩ上) |