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SI1551DL Complex FET 20V/-20V 290mA/-410mA SOT-363/SC70-6 marking KD

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Product description
最大源漏极电压Vds
Drain-Source Voltage
20V/-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
12V/12V
最大漏极电流Id
Drain Current
290mA/-410mA
源漏极导通电阻Rds
Drain-Source On-State Resistance
4.2Ω@ VGS =2.5V, ID =100mA/1.8Ω@ VGS =-2.5V, ID =-250mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
1V/-1V
耗散功率Pd
Power Dissipation
270mW/0.27W
Description & ApplicationsComplementary 20-V (D-S) MOSFET
描述与应用互补的20-V(D-S) 的MOSFET
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