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SI1551DL Complex FET 20V/-20V 290mA/-410mA SOT-363/SC70-6 marking KD
最大源漏极电压Vds Drain-Source Voltage | 20V/-20V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 12V/12V |
最大漏极电流Id Drain Current | 290mA/-410mA |
源漏极导通电阻Rds Drain-Source On-State Resistance | 4.2Ω@ VGS =2.5V, ID =100mA/1.8Ω@ VGS =-2.5V, ID =-250mA |
开启电压Vgs(th) Gate-Source Threshold Voltage | 1V/-1V |
耗散功率Pd Power Dissipation | 270mW/0.27W |
Description & Applications | Complementary 20-V (D-S) MOSFET |
描述与应用 | 互补的20-V(D-S) 的MOSFET |