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BSS225 MOSFET N-Channel 600V 90mA SOT-89 marking KD

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Product description
最大源漏极电压Vds Drain-Source Voltage600V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current90mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance4.5Ω/Ohm @90mA,4.5V
开启电压Vgs(th) Gate-Source Threshold Voltage1.2V
耗散功率Pd Power Dissipation360mW/0.36W
Description & Applications• n-channel • enhancement mode • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant
描述与应用•n沟道 •增强模式 •逻辑电平 •dv / dt的额定 •无铅引脚电镀,符合RoHS标准
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