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HN2A01FU-GR PNP+PNP Complex Bipolar Transistor -50V -0.15A HEF=200~400 SOT-363 marking M1G switch and digital circuit application
V(BR) CBO Collector-Base Voltage |
-50V |
V(BR) CEO Collector-Emitter Voltage |
-50V |
Collector Current(IC) | -150MA/-0.15A |
Transtion Frequency(fT) | 80MHZ |
DC Current Gain(hFE) | 200~400 |
VCE(sat) Collector-Emitter Saturation Voltage |
-0.1V~-0.3V |
Power Dissipation (Pd) | 200MW/0.2W |
Description & Applications | Audio Frequency General Purpose Amplifier Applications
Small package (dual type)
High voltage and high current : VCEO = −50V, IC = −150mA (max)
High hFE : hFE = 120~400
Excellent hFE linearity : hFE (IC = −0.1mA) / (IC = −2mA)
= 0.95 (typ.)
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Technical Documentation Download | Read Online |