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2SC560900L NPN Transistors(BJT) 60V 200mA/0.2A 180~390 100mV/0.1V sot-723 marking 3F amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 200mA/0.2A |
| 截止频率fT Transtion Frequency(fT) | |
| 直流电流增益hFE DC Current Gain(hFE) | 180~390 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 100mV/0.1V |
| 耗散功率Pc Power Dissipation | 100mW/0.1W |
| Description & Applications | Silicon PNP epitaxial planer type For general amplification Features • High foward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing |
| 描述与应用 | 硅PNP外延刨床类型 对于一般的放大 特点 •高电流传输比HFE FOWARD •SSS迷你型封装，允许裁员和变薄 带包装的设备，通过自动插入 |
