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MMBFJ201 JFET N-Channel 40v 0.2~1mA SOT-23 marking 62P low level radio

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Product description
最大源漏极电压Vds
Drain-Source Voltage
40v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-40v
漏极电流(Vgs=0V)IDSS
Drain Current
0.2~1ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-0.3~-1.5v
耗散功率Pd
Power Dissipation
350mW/0.35W
Description & ApplicationsN-Channel General Purpose Amplifier • This device is designed primarily for low level audio and general purpose applications with high impedance signal sources.
描述与应用N-通道通用放大器 •本设备主要用于低级别的音频和通用应用高阻抗信号源设计。
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