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EMF21 Complex Bipolar Digital Transistor -15V -500mA HEF= 270~680 0.15W SOT-563/EMT6 marking F21 switching inverting interface driver circuit

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Product description
Collector-Base Voltage(VCBO) Q1/Q2 -15V/50V
Collector-Emitter Voltage(VCEO) Q1/Q2 -12V/50V
Collector Current(IC) Q1/Q2 -500mA/100mA
Q1 Input Resistance(R1)  
Q1Base-Emitter Resistance(R2)  
Q1(R1/R2) Q1 Resistance Ratio  
Q2 Input Resistance(R1) 10KΩ/Ohm
Q2Base-Emitter Resistance(R2) 10KΩ/Ohm
(R1/R2) Q2 Resistance Ratio 1
 DC Current Gain(hFE) Q1 270~680
 Transtion Frequency(fT) 260MHz/250MHz
Pc Power Dissipation 150mW/0.15W
Description & Applications Features •Power management (dual transistors) •2SA2018 and DTC114E are housed independently in a EMT6 or UMT6 package.. •Power switching circuit in a single package. •Mounting cost and area can be cut in half.
描述与应用 特点 •电源管理（双晶体管） •2SA2018和DTC114E被安置独立在EMT6 UMT6包装.. •电源开关电路，在单一封装中。 •安装成本和面积可减少一半
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