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FFB5551 NPN+NPN Complex Bipolar Transistor 180V 200mA 300MHZ SOT-363/SC70-6 marking p1 switch and digital circuit application
V(BR) CBO Collector-Base Voltage |
180V |
V(BR) CEO Collector-Emitter Voltage |
160V |
Collector Current(IC) | 200MA |
Transtion Frequency(fT) | 300MHZ |
DC Current Gain(hFE) | 30~250 |
VCE (sat) Collector-Emitter Saturation Voltage |
0.2V |
Power Dissipation (Pd) | 0.2W |
Description & Applications | Dual-Chip NPN General Purpose Amplifier
• This device is deisgned for general purpose high voltage amplifiers.
• E1 is Pin 1.
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Technical Documentation Download | Read Online |