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MMBT3904-G NPN Transistors(BJT) 60V 200mA/0.2A 250Mhz 100~300 300mV/0.3V SOT-23/SC-59 marking 1AM
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 40V |
| 集电极连续输出电流IC Collector Current(IC) | 200mA/0.2A |
| 截止频率fT Transtion Frequency(fT) | 250Mhz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 300mV/0.3V |
| 耗散功率Pc Power Dissipation | |
| Description & Applications | Epitaxial planar die construction -As complementary type,the PNP Q172transistor MMBT3906-G is recommended |
| 描述与应用 | 外延平面模施工 作为互补型，PNP 建议晶体管MMBT3906-G |
