Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
2SA1730R PNP transistors（BJT） -50V -3A 300MHz 100~200 -300mV/-0.3V SOT-89/PCP marking AHR highspeed switch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −40V |
| 集电极连续输出电流IC Collector Current(IC) | -3A |
| 截止频率fT Transtion Frequency(fT) | 300MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~200 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率Pc PoWer Dissipation | 1.5W |
| Description & Applications | PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • Adoption of FBET, MBIT processes. • Large current capacity. • Low collector-to-emitter saturation voltage. • High-speed switching. • Small-sized package. |
| 描述与应用 | PNP外延平面硅晶体管 高速开关应用 特点 •通过FBET，MBIT过程。 •大电流容量。 •低集电极 - 发射极饱和电压。 •高速开关。 •小型包装。 |
