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2SA1730R PNP transistors(BJT) -50V -3A 300MHz 100~200 -300mV/-0.3V SOT-89/PCP marking AHR highspeed switch

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−40V
集电极连续输出电流IC
Collector Current(IC)
-3A
截止频率fT
Transtion Frequency(fT)
300MHz
直流电流增益hFE
DC Current Gain(hFE)
100~200
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-300mV/-0.3V
耗散功率Pc
PoWer Dissipation
1.5W
Description & ApplicationsPNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • Adoption of FBET, MBIT processes. • Large current capacity. • Low collector-to-emitter saturation voltage. • High-speed switching. • Small-sized package.
描述与应用PNP外延平面硅晶体管 高速开关应用 特点 •通过FBET,MBIT过程。 •大电流容量。 •低集电极 - 发射极饱和电压。 •高速开关。 •小型包装。
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