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MBRM110LT3G SBD Schottky Barrier Diodes 10v 1A 415mV/0.415V 457-04 marking 1L1 low forward voltage low thermal resistance
反向电压Vr Reverse Voltage | 10v |
平均整流电流Io AVerage Rectified Current | 1A |
最大正向压降VF Forward Voltage(Vf) | 415mV/0.415V |
最大耗散功率Pd Power dissipation | |
Description & Applications | • Ultra Low VF • 1st in Marketplace with a 10 VR Schottky Rectifier • Low Profile − Maximum Height of 1.1 mm • Small Footprint − Footprint Area of 8.45 mm2 • Low Thermal Resistance with Direct Thermal Path of Die on • ESD Protection: Human Body Model >4000 V (Class 3) • Pb−Free Packages are Available • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight: 62 mg (Approximately) • Lead and Mounting Surface Temperature for Soldering Purposes: •260°C Maximum for 10 Seconds |
描述与应用 | •超低VF •第10 VR肖特基整流器市场 •薄型 - 最大高度为1.1毫米 •占地面积小 - 占位面积为8.45平方毫米 •低热阻电路小片直接散热路径 •ESD保护:人体模型>4000 V(3级) •无铅包可用 •环氧会见UL 94 V-0@0.125 •重量:62毫克(约) •铅和安装表面焊接温度的目的: •260°C最大10秒 |