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FDJ128N MOSFET N-Channel 20V 550mA/0.55A SOT-363/SC70-6/TSSOP6/SC-88 marking B22 low on-resistance/ultra highspeed switch/4Vdriver
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 550mA/0.55A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 35Ω/Ohm @5.5A,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.2V |
| 耗散功率Pd Power Dissipation | 1.6W |
| Description & Applications | N-Channel 2.5 Vgs Specified PowerTrench MOSFET General Description This N-Channel -2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features • 5.5 A, 20 V. RDS(ON) = 35 mΩ @ VGS = 4.5 V RDS(ON) = 51 mΩ @ VGS = 2.5 V • Low gate charge • High performance trench technology for extremely ow RDS(ON) • Compact industry standard SC75-6 surface mount package |
| 描述与应用 | N沟道2.5 VGS指定的PowerTrench MOSFET 概述 这N沟道2.5V指定的MOSFET采用飞兆半导体先进的低电压的PowerTrench过程。 它已被优化的电池电源管理应用。 •5.5 A，20 V。 RDS（ON）= 35MΩ@ VGS= 4.5 V RDS（ON）= 51MΩ@ VGS= 2.5 V •低栅极电荷 •高性能沟道技术极流的RDS（ON） •紧凑型工业标准SC75-6表面贴装封装 |
