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SI3457CDV-T1-GE3 MOSFET P-Channel -30V -4.1A 0.060ohm SOT-163 marking ATO

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage		20V
最大漏极电流Id
Drain Current		-4.1A/-0.1A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.060Ω @-4.1A,-10V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-1.0--3.0V
耗散功率Pd
Power Dissipation		2W
Description & ApplicationsFEATURES TrenchFET Power MOSFET
描述与应用功率MOSFET
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