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CPH3201 NPN Transistors(BJT) 30V 2A 150MHz 200~400 400mV/0.4V SOT-23/SC-59 marking CA DCswitch application

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
30V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
30V
集电极连续输出电流IC
Collector Current(IC)
2A
截止频率fT
Transtion Frequency(fT)
150MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter Saturation Voltage
400mV/0.4V
耗散功率Pc
Power Dissipation
900mW/0.9W
Description & ApplicationsNPN Epitaxial Planar Silicon Transistors DC Converter Applications Applications :Relay drivers, lamp drivers, motor drivers, and strobes. Features Adoption of FBET and MBIT processes. Large current capacitance.. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall-sized package permitting applied sets to be made small and slim (mounting height : 0.9mm). High allowable power dissipation.
描述与应用NPN平面外延硅晶体管 DC转换器应用 应用范围:继电器驱动器,灯驱动器,电机驱动器和闪光灯。 特点 通过的FBET和MBIT进程。 大电流容量.. 低集电极 - 发射极饱和电压。 高速开关。 超小尺寸封装允许应用集 小巧玲珑(安装高度:0.9毫米)。 高允许功耗。
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